| 发明名称 |
Controlled dry etch of a film |
| 摘要 |
The controlled etch into a substrate or thick homogeneous film is accomplished by introducing a sacrificial film to gauge the depth to which the substrate/thick film has been etched. Optical endpointing the etch of the sacrificial film on the etch stop layer allows another element of process control over the depth of the primary trench or via.
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| 申请公布号 |
US2005130409(A1) |
申请公布日期 |
2005.06.16 |
| 申请号 |
US20050044393 |
申请日期 |
2005.01.26 |
| 申请人 |
VARGHESE RONNIE P. |
发明人 |
VARGHESE RONNIE P. |
| 分类号 |
H01L21/3065;H01L21/00;H01L21/308;H01L21/311;H01L21/461;H01L21/4763;H01L21/76;H01L31/107;(IPC1-7):H01L21/00;H01L21/476 |
主分类号 |
H01L21/3065 |
| 代理机构 |
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| 主权项 |
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