发明名称 |
Heterolayered ferroelectric thin films and methods of forming same |
摘要 |
Heterolayered thin films having ferroelectric/piezoelectric layers of alternating crystal structures and methods of their preparation are provided. In the ferroelectric/piezoelectric thin film, a first layer has a rhombohedral crystal structure and a second layer adjacent the first layer has a tetragonal crystal structure. The layers have a (100) preferred orientation with alpha-axis normal to the surface of the film. The first layer can be a Zr-rich lead ziroconate titanate layer (e.g., PbZr<SUB>0.8</SUB>Ti<SUB>0.2</SUB>O<SUB>3</SUB>) and the second layer can be a Ti-rich PZT layer (e.g., PbZr<SUB>0.2</SUB>Ti<SUB>0.8</SUB>O<SUB>3</SUB>). Heterolayered ferroelectric/piezoelectric thin film comprising a plurality of such first and second layers in alternating sequence exhibits particularly improved electrical properties.
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申请公布号 |
US2005128675(A1) |
申请公布日期 |
2005.06.16 |
申请号 |
US20030738715 |
申请日期 |
2003.12.16 |
申请人 |
WANG JOHN;ZHOU ANTHONY Z.;XUE JUNMIN |
发明人 |
WANG JOHN;ZHOU ANTHONY Z.;XUE JUNMIN |
分类号 |
B32B9/00;C23C18/12;H01L41/18;H01L41/22;(IPC1-7):B32B9/00 |
主分类号 |
B32B9/00 |
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