发明名称 |
THIN FILM TRANSISTOR, DISPLAY DEVICE AND LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
<p>As a wiring becomes thicker, discontinuity of an insulating film covering the wiring has become a problem. It is difficult to form a wiring with width thin enough for a thin film transistor used for a current high definition display device. As a wiring is made thinner, signal delay due to wiring resistance has become a problem. In view of the above problems, the invention provides a structure in which a conductive film is formed in a hole of an insulating film, and the surfaces of the conductive film and the insulating film are flat. As a result, discontinuity of thin films covering a conductive film and an insulating film can be prevented. A wiring can be made thinner by controlling the width of the hole. Further, a wiring can be made thicker by controlling the depth of the hole.</p> |
申请公布号 |
WO2005055309(A1) |
申请公布日期 |
2005.06.16 |
申请号 |
WO2004JP18105 |
申请日期 |
2004.11.30 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;YAMAZAKI, SHUNPEI;MAEKAWA, SHINJI;KANNO, YOHEI |
发明人 |
YAMAZAKI, SHUNPEI;MAEKAWA, SHINJI;KANNO, YOHEI |
分类号 |
H01L21/28;H01L21/288;H01L21/336;H01L21/768;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L21/336;G02F1/136;H01L21/320;G09F9/30 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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