METHODS OF INCORPORATING GERMANIUM WITHIN CMOS PROCESS

摘要

Methods for deposition of a Ge layer during a CMOS process on a monolithic device are disclosed. The insertion of the Ge layer enables the conversion of light to electrical signals easily. As a result of this method, standard metals can be attached directly to the Ge in completing an electrical circuit. Vias can also be used to connect to the Ge layer. In a first aspect of the invention, a method comprises the step of incorporating the deposition of Ge at multiple temperatures in a standard CMOS process. In a second aspect of the invention, a method comprises the step of incorporating the deposition of poly-Ge growth in a standard CMOS process.