发明名称 THIN FILM FORMATION METHOD AND THIN FILM FORMATION BODY
摘要 <P>PROBLEM TO BE SOLVED: To provide a thin film formation method capable of stably forming a soil-resistant film having high uniformity, excellent water repellency, oil repellency, sebum and ink wiping properties and repetitive durability thereof even if long-term thin film formation is performed continuously. <P>SOLUTION: The thin film formation method forms a thin film on a base material by introducing thin film forming gas into a discharge space consisting of a first electrode and second electrode facing each other under the atmospheric pressure or a pressure near the atmospheric pressure, applying an electric field to the thin film forming gas to excite the gas, and exposing the base material to the excited thin film forming gas. The thin film forming gas contains an organometallic compound having an organic group including a fluorine atom. The second electrode has a cleaning film for preventing the electrode from being directly exposed to the excited thin film forming gas. The cleaning film is transported while being held in tight contact with the discharge surface of the second electrode. The base material is transported while being held in tight contact with the discharge surface of the first electrode when exposed to the excited thin film forming gas. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005154788(A) 申请公布日期 2005.06.16
申请号 JP20030390912 申请日期 2003.11.20
申请人 KONICA MINOLTA HOLDINGS INC 发明人 ARITA HIROAKI;KUDO KAZUYOSHI;SAITO ATSUSHI
分类号 G02B1/10;C23C16/18;C23C16/509 主分类号 G02B1/10
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