| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce damage caused by negative ions or the like during deposition of a fluorine-containing thin film by a sputtering method. <P>SOLUTION: In a step of depositing a fluorine-containing thin film 21 by sputtering a target which faces a work W with sputtering gas introduced from a gas feed line 13 in a film deposition chamber 1, and allowing generated particles to react with fluorine-containing gas introduced from a gas feed line 14 so as to be deposited on a base body 20 of the work W, hydrogen is added to the sputtering gas for a short period of time after film deposition is started to suppress damages to the film caused by negative ions in plasma. Hydrogen is introduced only at the beginning of the film deposition because troubles such as abnormal discharge occur if hydrogen is continuously added for a long period of time. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
