| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent element rupture by reducing a strain in a connecting part in the semiconductor device when a big thermal stress is acted. <P>SOLUTION: The semiconductor device 1 is provided with a semiconductor element 2 and a pair of metallic bodies 3, 4 for radiating heat from both surfaces of the semiconductor element 2 while serving as electrodes also, and is constituted so that the substantially whole of the device 1 is molded by a resin. In this case, a resin having a glass transition point higher than the guaranteed upper limit value using temperature of the semiconductor device 1, is employed as the resin 7. According to this constitution, the glass transition point of the resin 7 confining the semiconductor element 2 is higher than the upper limit value of guaranteed using temperature of the semiconductor device 1 whereby a sufficiently big compressing force is applied on the semiconductor element 2 within a normal using temperature range. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
