发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method thereof capable of preventing a wafer from cracking and correcting the warpage of the wafer, preventing once-executed various reliability tests from becoming useless, and contributing to simplification of manufacturing processes and improvement of heat dissipation. <P>SOLUTION: The backside of a semiconductor wafer 30 is ground to be thinned into a predetermined thickness, and then a metal layer 19 made of a metal having a linear expansion coefficient close to the linear expansion coefficient of the semiconductor wafer 30 is formed on the thinned surface. Next, the semiconductor wafer is sealed with a resin 20, a metal bump 21 is bonded to the top portion of a metal post 17 (barrier metal layer 18), and the wafer is divided into respective device units 10. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005158929(A) 申请公布日期 2005.06.16
申请号 JP20030393695 申请日期 2003.11.25
申请人 SHINKO ELECTRIC IND CO LTD 发明人 YAMANO KOJI
分类号 H01L23/12;H01L21/304;H01L21/60;H01L23/02;H01L23/31;H01L23/485;(IPC1-7):H01L23/12 主分类号 H01L23/12
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