发明名称 METHOD OF MANUFACTURING GROUP III NITRIDE
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a group III nitride capable of obtaining the group III nitride at low temperature and pressure. SOLUTION: The method for manufacturing the group III nitride yields the group III nitride by reacting one kind of a group III raw material substance or a mixture of a plurality of kinds of group III raw material substances; and an alkali metal nitride in an oxygen-free atmosphere. Aluminum oxide, gallium oxide or indium oxide is preferably used for the group III raw material substance. The oxygen-free atmosphere can be formed of an inert gas such as nitrogen, argon or helium. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005154193(A) 申请公布日期 2005.06.16
申请号 JP20030394213 申请日期 2003.11.25
申请人 KITAGAWA IND CO LTD;MINOURA HIDEKI;MABUCHI AKIRA 发明人 MINOURA HIDEKI;MABUCHI AKIRA;MANABE KATSUHIDE
分类号 C01B21/06;C01F7/00;C01G15/00;(IPC1-7):C01B21/06 主分类号 C01B21/06
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