发明名称 |
METHOD OF MANUFACTURING GROUP III NITRIDE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a group III nitride capable of obtaining the group III nitride at low temperature and pressure. SOLUTION: The method for manufacturing the group III nitride yields the group III nitride by reacting one kind of a group III raw material substance or a mixture of a plurality of kinds of group III raw material substances; and an alkali metal nitride in an oxygen-free atmosphere. Aluminum oxide, gallium oxide or indium oxide is preferably used for the group III raw material substance. The oxygen-free atmosphere can be formed of an inert gas such as nitrogen, argon or helium. COPYRIGHT: (C)2005,JPO&NCIPI
|
申请公布号 |
JP2005154193(A) |
申请公布日期 |
2005.06.16 |
申请号 |
JP20030394213 |
申请日期 |
2003.11.25 |
申请人 |
KITAGAWA IND CO LTD;MINOURA HIDEKI;MABUCHI AKIRA |
发明人 |
MINOURA HIDEKI;MABUCHI AKIRA;MANABE KATSUHIDE |
分类号 |
C01B21/06;C01F7/00;C01G15/00;(IPC1-7):C01B21/06 |
主分类号 |
C01B21/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|