发明名称 |
SILICIDE RESISTOR IN BEOL LAYER OF SEMICONDUCTOR DEVICE AND METHOD |
摘要 |
A suicide resistor for inclusion in a BEOL layer, and a method of forming the same that provides few additional manufacturing steps. The method allows formation of a passive resistor during BEOL processing without high temperature anneals that would damage other BEOL wiring structures. In particular, the method includes forming a silicide over a polysilicon base in a trough, where the silicide provides the desired resistivity and has a silicidation temperature less than a damaging temperature of the plurality of BEOL layers.
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申请公布号 |
US2005130383(A1) |
申请公布日期 |
2005.06.16 |
申请号 |
US20030707388 |
申请日期 |
2003.12.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DIVAKARUNI RAMACHANDRA;STRANE JAY W. |
分类号 |
H01L21/02;H01L21/20;H01L27/08;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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