| 摘要 |
952,985. Semi-conductor devices. TELEFUNKEN A.G. April 8, 1960 [April 8, 1959], No. 12491/60. Heading H1K. In a transistor, the base zone includes particles (e.g. copper atoms) in a concentration such that the rate of recombination of charge carriers is a maximum adjacent either the emitter or the collector zone and reduces to a minimum adjacent the other of said zones. The Figure shows a device comprising base zone 1, emitter zone 2 and collector zone 3. A recombination layer 4 is provided adjacent the emitter which has the effect of reducing the grounded emitter current amplification factor # to improve the operating cut-off frequency. Alternatively the recombination layer could be adjacent the collector to prevent overloading and prevent storage effects. The recombination layer may be provided by diffusion of copper or nickel atoms.
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