| 摘要 |
A method for forming a silicon-on-insulator transistor ( 80 ) includes forming an active region ( 82 ) overlying an insulating layer ( 122 ), wherein a portion of the active region provides an intrinsic body region ( 126 ). A body tie access region ( 128 ) is also formed within the active region, overlying the insulating layer and laterally disposed adjacent the intrinsic body region, making electrical contact to the intrinsic body region. A gate electrode ( 134 ) is formed overlying the intrinsic body region for providing electrical control of the intrinsic body region, the gate electrode extending over a portion ( 137 ) of the body tie access region. The gate electrode is formed having a substantially constant gate length ( 88 ) along its entire width overlying the intrinsic body region and the body tie access region to minimize parasitic capacitance and gate electrode leakage. First and second current electrodes ( 98,100 ) are formed adjacent opposite sides of the intrinsic body region. In addition, a body tie diffusion ( 130 ) is formed within the active region and laterally offset from the body tie access region and electrically coupled to the body tie access region.
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