发明名称 |
Contactless mask programmable rom |
摘要 |
A contactless Mask ROM is described, comprising a plurality of MOS-type memory cells. The memory cells include a plurality of first memory cells and a plurality of second memory cells. The first memory cells have a first channel conductivity so that they are depletion-mode MOS transistors, and the second memory cells have a second channel conductivity so that they are enhanced-mode MOS transistors. In the contactless Mask ROM, a memory cell shares two diffusions with two adjacent memory cells that are aligned with the memory cell along a first direction.
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申请公布号 |
US2005127454(A1) |
申请公布日期 |
2005.06.16 |
申请号 |
US20040509908 |
申请日期 |
2004.09.28 |
申请人 |
LIOU JHYY-CHENG;LIN CHIN-HSI |
发明人 |
LIOU JHYY-CHENG;LIN CHIN-HSI |
分类号 |
H01L;H01L21/8238;H01L21/8246;H01L21/8247;H01L27/112;H01L27/115;H01L29/76;(IPC1-7):H01L29/76 |
主分类号 |
H01L |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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