发明名称 Method for making a package substrate without etching metal layer on side walls of die-cavity
摘要 A method for making a package substrate without etching metal layer on side walls of a die-cavity is disclosed. At least a through slot is formed around a defined die-cavity region of a substrate so as to form a die-cavity portion in the die-cavity region. The through slot has side walls without cutting off the die-cavity portion. A metal layer is formed on the side walls inside the through slot. A dry film is attached on the substrate and the die-cavity portion so as to seal the side walls of the through slot. The metal layer on the side walls is reserved during etching. A die-cavity with metalized side walls is formed after removing the die-cavity portion.
申请公布号 US2005130431(A1) 申请公布日期 2005.06.16
申请号 US20030733272 申请日期 2003.12.12
申请人 ADVANCED SEMICONDUCTOR ENGINEERING INC. 发明人 CHEN CHIA-SHANG;LIN KUANG-HUA;TZENG CHI-JAU;JIANG JIAN-MING
分类号 H01L21/311;H01L21/48;H01L23/498;H05K1/18;H05K3/06;H05K3/40;H05K3/42;(IPC1-7):H01L21/311 主分类号 H01L21/311
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