发明名称 |
Flash memory and mapping control apparatus and method for flash memory |
摘要 |
A mapping algorithm for efficient access to a flash memory (100), wherein block state information that is changed through logical operations required by a processor (500) is written in the flash memory (100) according to a predetermined state transition algorithm and the changed information is referred to upon read/write operations. A mapping control apparatus for a flash memory (100) according to the present invention includes a flash memory (100) having regions divided on a block basis and containing block state information indicating the state of each block, each block including a predetermined number of sectors; and a processor (500) for determining a sector on which a predetermined logical operation is to be performed based on the block state information and updating the block state information according to a predetermined state transition algorithm, when the logical operation is required for the flash memory (100).
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申请公布号 |
EP1542129(A2) |
申请公布日期 |
2005.06.15 |
申请号 |
EP20040257479 |
申请日期 |
2004.12.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHUNG, TAE-SUN;PARK, HYUNG-SEOK;JUNG, MYUNG-JIN |
分类号 |
G06F12/16;G06F12/00;G06F12/02;(IPC1-7):G06F12/02 |
主分类号 |
G06F12/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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