发明名称 Flash memory and mapping control apparatus and method for flash memory
摘要 A mapping algorithm for efficient access to a flash memory (100), wherein block state information that is changed through logical operations required by a processor (500) is written in the flash memory (100) according to a predetermined state transition algorithm and the changed information is referred to upon read/write operations. A mapping control apparatus for a flash memory (100) according to the present invention includes a flash memory (100) having regions divided on a block basis and containing block state information indicating the state of each block, each block including a predetermined number of sectors; and a processor (500) for determining a sector on which a predetermined logical operation is to be performed based on the block state information and updating the block state information according to a predetermined state transition algorithm, when the logical operation is required for the flash memory (100).
申请公布号 EP1542129(A2) 申请公布日期 2005.06.15
申请号 EP20040257479 申请日期 2004.12.01
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHUNG, TAE-SUN;PARK, HYUNG-SEOK;JUNG, MYUNG-JIN
分类号 G06F12/16;G06F12/00;G06F12/02;(IPC1-7):G06F12/02 主分类号 G06F12/16
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