| 摘要 |
1,106,480. Semi-conductor device. ROBERT BOSCH G.m.b.H. 25 Aug., 1965 [25 Aug., 1964], No. 36434/65. Heading H1K. A semi-conductor arrangement is produced from a mono-crystalline semi-conductor body having a surface layer of a metal semi-conductor eutectic by activating the eutectic layer with an aqueous solution containing nickel and fluoride ions and reducing the nickel salt to form an electrode using sodium hypophosphite. A Si disc 1 having a PN junction therein formed by diffusion of B and P, is etched with HF saturated with K 2 G 2 O 7 and then with a mixture of NaOH and KOH with or without sodium citrate or tartrate or EDTA. After washing and drying, the disc is metallized in vacuo with Ag or Au and annealed at 900‹ C. in H 2 to give eutectic layers 2. The body is then treated with an aqueous solution of NiCl 2 or NiSO 4 and NH 4 F and subsequently with sodium hypophosphite to give Ni layers 3.
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