发明名称 |
METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR WAFER AND COMPOUND SEMICONDUCTOR DEVICE |
摘要 |
A method for producing a compound semiconductor wafer used for production of HBT by vapor growth of a sub-collector layer, a collector layer, a base layer and an emitter layer in this turn on a compound semiconductor substrate using MOCVD method wherein the base layer is grown as a p-type compound semiconductor thin film layer containing at least one of Ga, Al and In as a Group III element and As as a Group V element under such growth conditions that the growth rate gives a growth determined by a Group V gas flow rate-feed. <IMAGE>
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申请公布号 |
EP1542288(A1) |
申请公布日期 |
2005.06.15 |
申请号 |
EP20030784504 |
申请日期 |
2003.08.01 |
申请人 |
SUMITOMO CHEMICAL COMPANY, LIMITED;SUMIKA EPI SOLUTION COMPANY, LTD. |
发明人 |
YAMADA, HISASHI;FUKUHARA, NOBORU |
分类号 |
H01L21/205;H01L21/331;H01L29/737;(IPC1-7):H01L29/737 |
主分类号 |
H01L21/205 |
代理机构 |
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主权项 |
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地址 |
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