发明名称 |
Semiconductor component having a material reinforced contact area |
摘要 |
A semiconductor component having a material-reinforced contact area formed of a metal layer is disclosed. The contact area is jointly formed by a second metal area of a first metal layer and a fourth metal area of a second metal layer which is to be contacted. A thickness of the contact area material is at least twice that of a single metal layer and thereby prevents penetrative etching when a hole is created for contacting the metal layer.
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申请公布号 |
US6906370(B1) |
申请公布日期 |
2005.06.14 |
申请号 |
US20000685362 |
申请日期 |
2000.10.10 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
HUEBNER HOLGER;ROEHR THOMAS |
分类号 |
H01L21/768;H01L21/8242;H01L21/8246;H01L23/522;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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