发明名称 |
Semiconductor device with vertical transistor formed in a silicon-on-insulator substrate |
摘要 |
A semiconductor device has an element substrate including a semiconductor layer of a first conductivity type being formed over a semiconductor substrate with a dielectric film interposed therebetween. A groove is formed in the element substrate with a depth extending from a top surface of the semiconductor layer into the dielectric film, the groove having a width-increased groove portion in the dielectric film as to expose a bottom surface of the semiconductor layer. An impurity diffusion source is buried in the width-increased groove portion to be contacted with the bottom surface. A transistor is formed to have a first diffusion layer being formed through impurity diffusion from the impurity diffusion source to the bottom surface of the semiconductor layer, a second diffusion layer formed through impurity diffusion to the top surface of the semiconductor layer, and a gate electrode formed at a side face of the groove over the impurity diffusion source with a gate insulation film between the side face and the gate electrode.
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申请公布号 |
US6906372(B2) |
申请公布日期 |
2005.06.14 |
申请号 |
US20010993967 |
申请日期 |
2001.11.27 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
YAMADA TAKASHI;KAJIYAMA TAKESHI |
分类号 |
H01L21/8242;H01L27/108;H01L27/12;(IPC1-7):H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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