发明名称 |
Method of improving electroluminescent efficiency of a MOS device by etching a silicon substrate thereof |
摘要 |
The present invention discloses a method of improving an electroluminescent efficiency of a MOS device by etching a semiconductor substrate thereof. A chemical etching process is performed to remove surface states or surface defects located on the surface of a silicon substrate before a nanoparticle layer and a conducting layer is formed on the silicon substrate, in order that the non-radiative electron-hole recombination centers located on the surface of silicon substrate is suppressed. Accordingly, the percentage of radiative electron-hole recombination is heightened and the electroluminescent efficiency of a MOS light emitting device is drastically enhanced. Advantageously, the chemical etching step is able to create a nanostructure on the surface of the silicon substrate to increase the probability of the collision of electron-hole pairs and phonons, and the electroluminescent efficiency of a MOS light emitting device is improved as well.
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申请公布号 |
US6905977(B2) |
申请公布日期 |
2005.06.14 |
申请号 |
US20030396448 |
申请日期 |
2003.03.26 |
申请人 |
NATIONAL TAIWAN UNIVERSITY |
发明人 |
LIN CHING FUH;HUANG WU PING;HSIEH HSING HUNG;LIANG EIH ZHE |
分类号 |
H01L33/00;(IPC1-7):H01L21/302 |
主分类号 |
H01L33/00 |
代理机构 |
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主权项 |
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地址 |
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