发明名称 |
Single transistor ferroelectric transistor structure with high-k insulator |
摘要 |
A ferroelectric transistor gate structure with a ferroelectric gate and a high-k insulator is provided. The high-k insulator may serve as both a gate dielectric and an insulator to reduce, or eliminate, the diffusion of oxygen or hydrogen into the ferroelectric gate. A method of forming the ferroelectric gate structure is also provided. The method comprises the steps of forming a sacrificial gate structure, removing the sacrificial gate structure, depositing a high-k insulator, depositing a ferroelectric material, polishing the ferroelectric material using CMP, and forming a top electrode overlying the ferroelectric material.
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申请公布号 |
US6906366(B2) |
申请公布日期 |
2005.06.14 |
申请号 |
US20030441661 |
申请日期 |
2003.05.20 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
HSU SHENG TENG;ZHANG FENGYAN |
分类号 |
H01L21/8247;H01L21/28;H01L21/3105;H01L21/316;H01L21/336;H01L21/8246;H01L27/105;H01L29/49;H01L29/51;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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