Method of manufacturing a semiconductor integrated circuit device

摘要

A CVD device ( 100 ) used for depositing a silicon nitride has a structure in which a hot wall furnace ( 103 ) for thermally degrading a source gas and a chamber ( 101 ) for forming a film over a surface of a wafer ( 1 ) are separated from each other. The hot wall furnace ( 103 ) for thermally degrading the source gas is provided above the chamber ( 101 ), and a heater ( 104 ) capable of setting the inside of the furnace at a high temperature atmosphere of approximately 1200° C. is provided at the outer periphery thereof. The source gas, supplied to the hot wall furnace ( 103 ) through pipes ( 105 ) and ( 106 ), is thermally degraded in this furnace in advance, and degraded components thereof are supplied on a stage ( 102 ) of the chamber ( 101 ) to form a film on the surface of the wafer ( 1 ).