发明名称 Method of fabricating organic field effect transistors
摘要 Organic field effect transistors (OFETs) can be created rapidly and at low cost on organic films by using a multilayer film ( 202 ) that has an electrically conducting layer ( 204, 206 ) on each side of a dielectric core. The electrically conducting layer is patterned to form gate electrodes ( 214 ), and a polymer film ( 223 ) is attached onto the gate electrode side of the multilayer dielectric film, using heat and pressure ( 225 ) or an adhesive layer ( 228 ). A source electrode and a drain electrode ( 236 ) are then fashioned on the remaining side of the multilayer dielectric film, and an organic semiconductor ( 247 ) is deposited over the source and drain electrodes, so as to fill the gap between the source and drain electrodes and touch a portion of the dielectric film to create an organic field effect transistor.
申请公布号 US6905908(B2) 申请公布日期 2005.06.14
申请号 US20020329595 申请日期 2002.12.26
申请人 MOTOROLA, INC. 发明人 ZHANG JIE;GAMOTA DANIEL;ZHANG MIN-XIAN;BRAZIS PAUL;KALYANASUNDARAM KRISHNA
分类号 H01L51/00;H01L51/30;H01L51/40;(IPC1-7):H01L5/40 主分类号 H01L51/00
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