发明名称 |
Semiconductor device and method of manufacture thereof |
摘要 |
There is provided a method by which lightly doped drain (LDD) regions can be formed easily and at good yields in source/drain regions in thin film transistors possessing gate electrodes covered with an oxide covering. A lightly doped drain (LDD) region is formed by introducing an impurity into an island-shaped silicon film in a self-aligning manner, with a gate electrode serving as a mask. First, low-concentration impurity regions are formed in the island-shaped silicon film by using rotation-tilt ion implantation to effect ion doping from an oblique direction relative to the substrate. Low-concentration impurity regions are also formed below the gate electrode at this time. After that, an impurity at a high concentration is introduced normally to the substrate, so forming high-concentration impurity regions. In the above process, a low-concentration impurity region remains below the gate electrode and constitutes a lightly doped drain region.
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申请公布号 |
US6906383(B1) |
申请公布日期 |
2005.06.14 |
申请号 |
US20000526486 |
申请日期 |
2000.03.15 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ZHANG HONGYONG;TAKEMURA YASUHIKO;KONUMA TOSHIMITSU;OHNUMA HIDETO;YAMAGUCHI NAOAKI;SUZAWA HIDEOMI;UOCHI HIDEKI |
分类号 |
H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/10;H01L29/786;H01L31/20;(IPC1-7):H01L27/01 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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