| 发明名称 |
Magnetic memory element having controlled nucleation site in data layer |
| 摘要 |
A ferromagnetic data layer of a magnetic memory element is formed with a controlled nucleation site. In some embodiments, the nucleation site may be a divot in the data layer or a protrusion from the data layer. A Magnetic Random Access Memory ("MRAM") device may include an array of magnetic memory elements having data layers with controlled nucleation sites.
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| 申请公布号 |
US6905888(B2) |
申请公布日期 |
2005.06.14 |
| 申请号 |
US20030676414 |
申请日期 |
2003.09.30 |
| 申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
NICKEL JANICE H.;BHATTACHARYYA MANOJ |
| 分类号 |
G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):H01L21/00 |
主分类号 |
G11C11/15 |
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