| 摘要 |
A semiconductor device without any peel off from the insulation film and without any fracture that becomes the cause of a short circuit is obtained even if a metal such as Ru is employed for the storage node. On the semiconductor substrate are provided an underlying interlayer insulation film located over both a capacitor region and a peripheral region, an interlayer insulation film located above the underlying interlayer insulation film, and a tubular metal film having a bottom end portion in contact with the underlying interlayer insulation film, and piercing the interlayer insulation film with the opening side located at the upper side in the capacitor region and the peripheral region. The opening side of the tubular metal film is formed only of a portion extending along the sidewall of a throughhole in the interlayer insulation film.
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