| 摘要 |
A system and method for providing a single mode VCSEL (vertical cavity surface emitting laser) component ( 100 ) is disclosed, comprising a semiconductor substrate ( 102 ) having a lower surface and an upper surface, a bottom electrical contact ( 104 ) disposed along the lower surface of the substrate, a lower mirror ( 106 ) formed of n-type material and disposed upon the upper surface of the substrate, an active region ( 108 ) having a plurality of quantum wells disposed upon the lower mirror portion, an upper mirror ( 110 ) formed from isotropic material and disposed upon the active region, an equipotential layer ( 112 ) disposed upon the upper mirror portion, a first upper electrical contact ( 120 ) disposed upon the equipotential layer, a second upper electrical contact ( 122 ) disposed upon the equipotential layer at a particular distance ( 124 ) from the first upper electrical contact, a first isolation region ( 126 ) disposed beneath the first upper contact and traversing the equipotential layer, the upper mirror, the active region, and the lower mirror, a second isolation region ( 128 ) disposed beneath the second upper contact and traversing the equipotential layer, the upper mirror, the active region, and the lower mirror, and an insulating layer ( 114, 116 ) interposed between the upper mirror and the equipotential layer and adapted to form therebetween an aperture ( 118 ) of smaller dimension than the particular distance between the first and second upper contacts.
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