发明名称 |
Method and structure for determining a concentration profile of an impurity within a semiconductor layer |
摘要 |
A method is provided for determining a concentration profile of an impurity within a layer of a semiconductor topography. The method may include exposing the layer and an underlying layer to oxidizing conditions. In addition, the method may include comparing thickness measurements of total dielectric above the underlying layer taken before and after exposing the topography to oxidizing conditions . In some cases, the comparison may include plotting pre-oxidation thickness measurements versus post-oxidation measurements. In other embodiments, the comparison may include determining differences between the pre-oxidation and post-oxidation thickness measurements and correlating the differences to concentrations of the impurity. In some cases, such a correlation may include subtracting a concentration of the impurity at a first location along the semiconductor topography from a concentration of the impurity at a second location along the semiconductor topography.
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申请公布号 |
US6905893(B1) |
申请公布日期 |
2005.06.14 |
申请号 |
US20020289020 |
申请日期 |
2002.11.05 |
申请人 |
CYPRESS SEMICONDUCTOR CORP. |
发明人 |
NARAYANAN SUNDAR;RAMKUMAR KRISHNASWAMY |
分类号 |
G01N1/32;G01N19/06;H01L21/66;H01L23/544;(IPC1-7):H01L21/66 |
主分类号 |
G01N1/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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