摘要 |
A bipolar transistor (1) structure and process technology is described incorporating a emitter, a base, and a collector, with most (7) of the intrinsic base adjacent the collector having a graded energy bandgap and a layer (6) of the intrinsic base adjacent the emitter having a substantially constant energy bandgap. The invention has a smaller base transit time than a conventional graded-base- bandgap bipolar transistor (1).
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