| 发明名称 |
ТРЕХМЕРНАЯ СТРУКТУРА, ОБРАЗОВАННАЯ ТОНКИМИ КРЕМНИЕВЫМИ ПРОВОЛОКАМИ, СПОСОБ ЕЕ ИЗГОТОВЛЕНИЯ И УСТРОЙСТВО, СОДЕРЖАЩЕЕ ЕЕ |
| 摘要 |
A three-dimensional structure composed of highly-reliable silicon ultrafine wires, a method for producing the three-dimensional structure, and a device including the same are provided. The three-dimensional structure composed of silicon fine wires includes wires (2) on the order of nanometers to micrometers formed by wet etching utilizing the crystallinity of a single-crystal material. <IMAGE> |
| 申请公布号 |
RU2004139083(A) |
申请公布日期 |
2005.06.10 |
| 申请号 |
RU20040139083 |
申请日期 |
2003.06.02 |
| 申请人 |
ДЖАПАН САЙЕНС ЭНД ТЕКНОЛОДЖИ ЭЙДЖЕНСИ (JP) |
发明人 |
КАВАКАЦУ Хидеки (JP);КОБАЯСИ Дай (JP) |
| 分类号 |
G01G3/16;B01J20/28;B81B1/00;B81C1/00;B82B1/00;B82B3/00;G01K7/16;G01L1/10;G01N1/00;G01Q30/10;G01Q30/20;G01Q60/24;G01Q60/38;G01Q60/54;G01R33/02 |
主分类号 |
G01G3/16 |
| 代理机构 |
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代理人 |
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