METHOD OF FORMING CMOS TRANSISTOR,申请号KR20030087727-传众专利搜索

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发明名称	METHOD OF FORMING CMOS TRANSISTOR
摘要
申请公布号	KR20050054366(A)	申请公布日期	2005.06.10
申请号	KR20030087727	申请日期	2003.12.04
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	LEE, WOO SUNG;HAN, JAE JONG;PARK, SANG JIN;KIM, BONG HYUN
分类号	H01L21/8238;(IPC1-7):H01L21/823	主分类号	H01L21/8238
代理机构		代理人
主权项
地址

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