发明名称 HIGH FREQUENCY POWER AMPLIFIER MODULE
摘要 PROBLEM TO BE SOLVED: To provide a high frequency power amplifier module exhibiting stabilized power amplification characteristics regardless of variation in power supply voltage. SOLUTION: The high frequency power amplifier module comprises current mirror circuits 1 and 2 for extracting a current increment due to channel length modulation effect in an MOS transistor QN312, a current mirror circuit 3 for regulating the magnitude of a current I3c becoming an extracted current increment by the size ratio, and an MOS transistor QN31 being fed with a current I3e obtained by subtracting a current I3d becoming a regulated current increment from the constant current I3 of a constant current source 5c and supplying a bias current to an MOS transistor QN3 performing power amplification wherein the MOS transistor QN312 and the MOS transistor QN3 have an identical channel length modulation coefficient. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005150917(A) 申请公布日期 2005.06.09
申请号 JP20030382387 申请日期 2003.11.12
申请人 RENESAS TECHNOLOGY CORP;HITACHI ULSI SYSTEMS CO LTD;HITACHI HYBRID NETWORK CO LTD 发明人 MATSUSHITA KOICHI;TOYAMA OSAMU;ISHIMOTO KAZUHIKO
分类号 H03F3/68;H03F1/30;H03F3/213;(IPC1-7):H03F1/30 主分类号 H03F3/68
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