发明名称 |
HIGH FREQUENCY POWER AMPLIFIER MODULE |
摘要 |
PROBLEM TO BE SOLVED: To provide a high frequency power amplifier module exhibiting stabilized power amplification characteristics regardless of variation in power supply voltage. SOLUTION: The high frequency power amplifier module comprises current mirror circuits 1 and 2 for extracting a current increment due to channel length modulation effect in an MOS transistor QN312, a current mirror circuit 3 for regulating the magnitude of a current I3c becoming an extracted current increment by the size ratio, and an MOS transistor QN31 being fed with a current I3e obtained by subtracting a current I3d becoming a regulated current increment from the constant current I3 of a constant current source 5c and supplying a bias current to an MOS transistor QN3 performing power amplification wherein the MOS transistor QN312 and the MOS transistor QN3 have an identical channel length modulation coefficient. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005150917(A) |
申请公布日期 |
2005.06.09 |
申请号 |
JP20030382387 |
申请日期 |
2003.11.12 |
申请人 |
RENESAS TECHNOLOGY CORP;HITACHI ULSI SYSTEMS CO LTD;HITACHI HYBRID NETWORK CO LTD |
发明人 |
MATSUSHITA KOICHI;TOYAMA OSAMU;ISHIMOTO KAZUHIKO |
分类号 |
H03F3/68;H03F1/30;H03F3/213;(IPC1-7):H03F1/30 |
主分类号 |
H03F3/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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