| 摘要 |
PROBLEM TO BE SOLVED: To improve the ON withstanding voltage of a high-withstanding-voltage horizontal-type MOSFET which is obtained when applying a high gate voltage to it, in the horizontal-type MOSFET. SOLUTION: A distance L1 is made larger than a distance L2. The distance L1 is the one between an end 21 of a p-type source region 18 which is present on the surface of an n-type well region 17 and an end 22 of the n-type well region 17 which is opposed to the end 21. The surface of the n-type well region 17 is sandwiched between the p-type source region 18 and an n-type drift region 4. The distance L2 is the one between the end 22 which is present on the surface of the n-type drift region 4 and an end 23 of a p-type offset region 16 which is opposed to the end 22. The surface of the n-type drift region 4 is sandwiched between the n-type well region 17 and the p-type offset region 16. COPYRIGHT: (C)2005,JPO&NCIPI
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