发明名称 METAL FILM FORMATION METHOD AND PLATING DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce the amount of decomposed products to be produced and to facilitate the control and analysis in the concentration of an additive in a metal film formation method or a device, particularly, in a metal plating method and a device therefor. SOLUTION: Regarding the plating device 100 where, using a substrate in which an electrically conductive film is formed on the surface, a metal film is formed on the the surface of the electrically conductive film by plating, a pretreatment part 34 where a substance reducing the deposition potential of metal ions is adsorbed on the surface of the electrically conductive film, and a plating part 35 where the surface of the electrically conductive film on which the substance is adsorbed by the pretreatment part 34 is subjected to electroplating to form the metal film on the electrically conductive film are provided. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005146314(A) 申请公布日期 2005.06.09
申请号 JP20030382860 申请日期 2003.11.12
申请人 SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC 发明人 TOYODA YOSHIHIKO
分类号 C25D5/34;C25D7/12;(IPC1-7):C25D5/34 主分类号 C25D5/34
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