发明名称 |
Non-volatile multi-level, semiconductor flash memory device and method of driving same |
摘要 |
In a nonvolatile semiconductor memory device in which a plurality of threshold values are set to store multi-level data in a memory cell, bits of multi-bit data are separately written into a memory cell according to an address signal or a control signal to effect the reading and erasing. Concretely, the memory array is so constituted that it can be accessed by three-dimensional address of X, Y and Z, and multi-bit data in the memory cell is discriminated by the Z-address.
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申请公布号 |
US2005122803(A1) |
申请公布日期 |
2005.06.09 |
申请号 |
US20050041233 |
申请日期 |
2005.01.25 |
申请人 |
YAMADA NAOKI;SATO HIROSHI;TSUJIKAWA TETSUYA;MIYAZAWA KAZUYUKI |
发明人 |
YAMADA NAOKI;SATO HIROSHI;TSUJIKAWA TETSUYA;MIYAZAWA KAZUYUKI |
分类号 |
G11C11/56;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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