发明名称 |
Methods of fabricating integrated circuit conductive contact structures including grooves |
摘要 |
An integrated circuit includes a substrate and a first insulating layer on the substrate that includes a first hole including a floor and a sidewall. A first conductive contact extends conformally on the sidewall and floor to define a groove in the first hole. A second insulating layer is provided on the first insulating layer and includes a second hole that exposes the groove. A second conductive contact is provided in the second hole and in the groove. These integrated circuits are fabricated by forming a first insulating layer on a substrate that includes a first hole including a floor and a sidewall. A first conductive contact is conformally formed on the sidewall and floor to define a groove in the first hole. A second insulating layer is formed on the first insulating layer and includes a second hole that exposes the groove. A second conductive contact is formed in the second hole and in the groove.
|
申请公布号 |
US2005121755(A1) |
申请公布日期 |
2005.06.09 |
申请号 |
US20050039562 |
申请日期 |
2005.01.20 |
申请人 |
SHIN JU-CHEOL;LEE HYEON-DEOK;PARK HONG-MI;PARK IN-SUN |
发明人 |
SHIN JU-CHEOL;LEE HYEON-DEOK;PARK HONG-MI;PARK IN-SUN |
分类号 |
H01L21/768;H01L21/8242;H01L23/522;H01L27/108;(IPC1-7):H01L23/495 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|