发明名称 Methods of fabricating integrated circuit conductive contact structures including grooves
摘要 An integrated circuit includes a substrate and a first insulating layer on the substrate that includes a first hole including a floor and a sidewall. A first conductive contact extends conformally on the sidewall and floor to define a groove in the first hole. A second insulating layer is provided on the first insulating layer and includes a second hole that exposes the groove. A second conductive contact is provided in the second hole and in the groove. These integrated circuits are fabricated by forming a first insulating layer on a substrate that includes a first hole including a floor and a sidewall. A first conductive contact is conformally formed on the sidewall and floor to define a groove in the first hole. A second insulating layer is formed on the first insulating layer and includes a second hole that exposes the groove. A second conductive contact is formed in the second hole and in the groove.
申请公布号 US2005121755(A1) 申请公布日期 2005.06.09
申请号 US20050039562 申请日期 2005.01.20
申请人 SHIN JU-CHEOL;LEE HYEON-DEOK;PARK HONG-MI;PARK IN-SUN 发明人 SHIN JU-CHEOL;LEE HYEON-DEOK;PARK HONG-MI;PARK IN-SUN
分类号 H01L21/768;H01L21/8242;H01L23/522;H01L27/108;(IPC1-7):H01L23/495 主分类号 H01L21/768
代理机构 代理人
主权项
地址