| 摘要 |
1,107,498. Semi-conductor devices. MATSUSHITA ELECTRONICS CORPORATION. 28 Feb., 1967 [9 March, 1966], No. 9426/67. Heading H1K. A semi-conductor device comprises an insulating body provided with a plurality of parallel ridges each having a recessed portion and having a metal film extending over its upper surface and the recessed portion, a semiconductor element mounted in the recess of one ridge and electrically connected to the metal films in the recessed portions of the other ridges, and a sealing material covering the element but having its surface lower than the surfaces of the unrecessed portions of the ridges. As shown, Fig. 2, a body 1 of ceramic is produced by press-moulding to provide three longitudinally extending ridges 2 each ridge being provided with spaced recesses 3. The top surface of each ridge is metallized with molybdenum, and plated with nickel and gold to form conductive layers 4. The collector region of a passivated silicon transistor 5 is secured to the conductive layer of each recess in the central ridge and the base and emitter electrodes are connected by wires 6 to the conductive coatings in the recesses of the two outer ridges. The recess in the centre ridge is arranged to be deeper than those in the outer ridges by an amount equal to the thickness of the semiconductor device to facilitate the connection of wires 6 by a thermocompression bonding machine. Each of the transistors 5 and their connecting wires 6 are then encapsulated with epoxy resin in such a manner that the surface of the resin is below the surfaces of the unrecessed portions of the ridges, Fig. 3 (not shown). The body 1 is then severed to produce individual devices which may be face bonded to a printed circuit. The method may also be applied to diodes by providing only two ridges on the ceramic body. |
