| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a semiconductor device having a fine STI in which the capacitances of a floating gate and a control gate are controlled accurately. SOLUTION: A method of manufacturing the semiconductor device includes a step of sequentially forming an insulating film 120, a gate electrode 130, and a stopper film 140 on a semiconductor substrate 110; a step of forming trenches 136 on the stopper film, the gate electrode material, the insulating film and the semiconductor substrate, covering the bottom and the side faces in the trench with a first insulating material 180; a step of filling the intermediate part of the trench with a second insulating material 190; a step of flattening the first and second insulating materials to the upper surface of the stopper film; a step of isotropically etching the first and second insulating materials at the etching speed ratio A of the second insulating material to the etching speed of the first insulating material, until the depth from the upper surface of the gate electrode material to the upper surface of the first insulating material becomes D; and a step of setting the etching ratio A to about 1+H/D, when H is the height from the upper surface of the gate electrode before etching to the upper surface of the second insulating material. COPYRIGHT: (C)2005,JPO&NCIPI
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