| 摘要 |
PROBLEM TO BE SOLVED: To provide an oxide film forming apparatus that increases the oxide film forming rate relative to the injected amount of the raw material gas. SOLUTION: The oxide film forming apparatus 1 has a process gas source 3 for supplying a raw material gas, a process gas source 4 for supplying a reaction gas, a gas introducing section 10 having a gas passage 13 through which the raw material gas is blown onto a substrate 2 which is the object of treatment, and discharge sections 20, 20A having discharge spaces for converting the reaction gas into plasma and for blowing the plasma out onto the substrate 2. The apparatus 1 then uses a CVD method under a pressure near the atmospheric pressure for the formation of an oxide film on the surface of the substrate 2. In parallel with and on both sides of the gas introducing section 10, a plurality of discharge sections 20, 20A are arranged in parallel with each other. The raw material gas after passing through the gas passage 13 of the gas introducing section 10 and the reaction gas now converted into plasma after passing through the discharge spaces 23 of the discharge sections 20, 20A are mixed in the vicinity of the surface of the substrate 2 for the formation of an oxide film on the surface of the substrate 2. COPYRIGHT: (C)2005,JPO&NCIPI
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