| 摘要 |
PROBLEM TO BE SOLVED: To simultaneously clean a trench sidewall formed in a semiconductor substrate and an inner wall of an etching chamber. SOLUTION: Gas 12 for etching a semiconductor material is introduced into an etching chamber 10, and plasma 11 is produced in the etching chamber 10 to etch a semiconductor substrate 1, and further a trench 3 having the total volume of≥30 mm<SP>3</SP>is formed in the semiconductor substrate 1. Then, gas 14 containing Ar for etching products 4, 5 produced in the formation of the trench is introduced into the same etching chamber 10, and plasma 13 is produced in the etching chamber 10. Both of the etching products 4 adhering to the sidewall of the trench 3, and the etching product 5 adhering to an inner wall of the etching chamber 10, are simultaneously etched and removed without applying bias power. COPYRIGHT: (C)2005,JPO&NCIPI
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