发明名称 |
ELECTRODE FORMING METHOD, CAPACITOR ELEMENT, AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To microminiaturize electrodes constituting a capacitor element, and to provide a method of manufacturing a capacitor element equipped with the microminiaturized electrodes. SOLUTION: The method of manufacturing the capacitor element comprises processes of: forming a first conductive film on a semiconductor substrate; forming a first linear mask pattern which extends in a first direction on the first conductive film; etching the first conductive film by the use of the first mask pattern to form a conductive film pattern; forming a dielectric film and a second conductive film successively in this sequence on the semiconductor substrate; forming a second linear mask pattern which extends in a second direction different from the first direction on the second conductive film; and etching the second conductive film, the dielectric film, and the conductive film pattern by the use of the second mask pattern to form the capacitor element composed of a capacitor lower electrode, a capacitor insulating film, and a capacitor upper electrode. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005150339(A) |
申请公布日期 |
2005.06.09 |
申请号 |
JP20030384788 |
申请日期 |
2003.11.14 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
MIKAWA TAKUMI;HIRANO HIROSHIGE |
分类号 |
H01L21/768;H01L21/02;H01L21/8246;H01L27/105;(IPC1-7):H01L27/105 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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