发明名称 ELECTRODE FORMING METHOD, CAPACITOR ELEMENT, AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To microminiaturize electrodes constituting a capacitor element, and to provide a method of manufacturing a capacitor element equipped with the microminiaturized electrodes. SOLUTION: The method of manufacturing the capacitor element comprises processes of: forming a first conductive film on a semiconductor substrate; forming a first linear mask pattern which extends in a first direction on the first conductive film; etching the first conductive film by the use of the first mask pattern to form a conductive film pattern; forming a dielectric film and a second conductive film successively in this sequence on the semiconductor substrate; forming a second linear mask pattern which extends in a second direction different from the first direction on the second conductive film; and etching the second conductive film, the dielectric film, and the conductive film pattern by the use of the second mask pattern to form the capacitor element composed of a capacitor lower electrode, a capacitor insulating film, and a capacitor upper electrode. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005150339(A) 申请公布日期 2005.06.09
申请号 JP20030384788 申请日期 2003.11.14
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MIKAWA TAKUMI;HIRANO HIROSHIGE
分类号 H01L21/768;H01L21/02;H01L21/8246;H01L27/105;(IPC1-7):H01L27/105 主分类号 H01L21/768
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