| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device wherein no breakage is in a stress relaxation layer and a bump electrode can be formed into multi-terminals, and to provide a method for manufacturing the same that produces no breakage in the stress relaxation layer. <P>SOLUTION: In a metal mask 11 used for forming a stress relaxation layer 5, a relief 11a swelling outside an intersection O between extension lines x-x and y-y of adjoining two sides is provided at four corners of a through hole 12. When such the metal mask 11 is used, at least a part in the relief 12a is filled with a stress relaxation layer material during patterning of the stress relaxation layer 5, so that a projecting part 14 projecting outside from an intersection O between extension lines X-X and Y-Y of adjoining two sides is formed at four corners of the stress relaxation layer 5. Thus, the reduction of a bump electrode 9 due to defect in shape of the stress relaxation layer 5 can be prevented, and the bump electrode can be formed as multi-terminals as a result. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
