发明名称 |
METHOD OF MANUFACTURING SUBSTRATE FOR ELECTROOPTIC DEVICE, ELECTROOPTIC DEVICE, SUBSTRATE THEREFOR AND ELECTRONIC APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide an electrooptic substrate constituted by laminating a thin semiconductor film upon the substrate body without performing any high-temperature long-time heat treatment that causes the warping of the substrate or the defects of a semiconductor. SOLUTION: After an insulating layer is formed in a semiconductor substrate by the SIMOX method, a laminated substrate is formed by sticking the insulating layer to the substrate body, and the unnecessary laminated section other than a semiconductor layer is removed which becomes the active layer of a switching element. The film thickness of the semiconductor layer can be adjusted by the ion accelerating voltage applied during forming the insulating layer by the SIMOX method. COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2005150297(A) |
申请公布日期 |
2005.06.09 |
申请号 |
JP20030383821 |
申请日期 |
2003.11.13 |
申请人 |
SEIKO EPSON CORP |
发明人 |
SAITO JUN |
分类号 |
G02F1/1345;G02F1/1368;H01L21/02;H01L21/265;H01L21/336;H01L21/76;H01L21/762;H01L27/12;H01L29/786;(IPC1-7):H01L27/12;G02F1/136;G02F1/134 |
主分类号 |
G02F1/1345 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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