| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrooptical device capable of securing an aperture ratio of a liquid crystal device while improving the characteristics of a thin-film diode device, and a method for manufacturing the electrooptical device. SOLUTION: The thin-film diode device 19 has a 1st metal layer 22 formed on a 2nd substrate 6. Unevenness is formed on the top surface of the 1st metal layer 22 by, for example, a shot blast method. An insulating layer 23 is formed on the top surface of the 1st metal layer 22 by an anode-oxidation method, and a 2nd metal layer 24 is formed on the top surface of the insulating layer 23. Hence the top surface and reverse surface of the insulating layer 23 are made larger than before the unevenness is formed and the capacity becomes larger. Consequently, for example, the characteristics of the thin-film diode device can be improved and the same aperture ratio as before can be secured. Alternatively, the aperture ratio can be improved while the same characteristics of the thin-film diode device as before are maintained. COPYRIGHT: (C)2005,JPO&NCIPI |
