| 摘要 |
PROBLEM TO BE SOLVED: To grow a silicon epitaxial layer by vapor phase in a steep impurity profile on the main surface of a silicon single crystal substrate doped at high concentration. SOLUTION: In a silicon single crystal substrate PW wherein boron, arsenic or phosphorus is added as a dopant at a concentration of 1×10<SP>19</SP>/cm<SP>3</SP>or more and a CVD oxide film 1 is formed on the back of the substrate PW, an oxide film thereof is wet-etched by hydrofluoric acid treatment while the CVD oxide film 1 is left as it is (step S5). Next, the silicon single crystal substrate PW is baked at 950°C or higher in a hydrogen gas, and a natural oxide film on the main surface of the silicon single crystal substrate PW is dry-etched (step S7). Then, a sub-epitaxial layer 2 is formed at a lower temperature than the growth temperature of a main epitaxial layer 3 (step S8), and the main epitaxial layer 3 is formed on the sub-epitaxial layer 2 at≥900°C and≤1,200°C (step S9). COPYRIGHT: (C)2005,JPO&NCIPI
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