发明名称 SILICON INGOT AND HEAVY METAL CONTAMINATION EVALUATING METHOD OF SILICON WAFER
摘要 PROBLEM TO BE SOLVED: To provide a silicon ingot and a heavy metal contamination evaluating method for noncontactly and conveniently evaluating a metal contamination in a short time. SOLUTION: The method includes a process for calculating interface level densities D<SB>it</SB>of a plurality of transition metals from a plurality of reference samples of various transition metals and creating a database including a plurality of the interface level densities D<SB>it</SB>, a process for calculating the interface level density D<SB>it</SB>from a measurement sample, and a process for comparing the interface level density D<SB>it</SB>of the measurement sample with the interface level densities D<SB>it</SB>of a plurality of the transition metals included in the DB (database), and identifying that the transition metal contaminating the measurement sample is the transition metal having the same or approximate pattern in the DB when the interface level density D<SB>it</SB>of the measurement sample has the same or approximate pattern of one of the interface level densities D<SB>it</SB>in the DB. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005147809(A) 申请公布日期 2005.06.09
申请号 JP20030384480 申请日期 2003.11.14
申请人 SUMITOMO MITSUBISHI SILICON CORP 发明人 KURITA KAZUNARI
分类号 G01N27/00;H01L21/66;(IPC1-7):G01N27/00 主分类号 G01N27/00
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