| 摘要 |
A fuse arrangement in a semiconductor device, including a fuse resistor being connected to a first voltage, and a transistor passing current to the fuse resistor, wherein a second voltage is applied to a gate of the transistor, the second voltage being greater than the first voltage. Another fuse arrangement in a semiconductor device, including a first fuse resistor having a first terminal connected to a first voltage and a second terminal connected to a first node, a second fuse resistor having a third terminal connected to the first voltage and a fourth terminal connected to a second node, and a transistor being controlled by a first signal with a second voltage, the transistor passing current to the second terminal of the first fuse resistor based on the first signal, the second voltage being greater than the first voltage. A method of burning out a fuse resistor in a fuse arrangement, including converting a received first signal with a first voltage level to a second signal with a second voltage level, the second voltage level being greater than the first voltage level, and applying the second signal to the fuse resistor.
|
