| 发明名称 |
Vertical cavity surface emitting laser diode and method for manufacturing the same |
| 摘要 |
In a vertical cavity surface emitting laser diode manufactured on a non-off-angle substrate with a (100)-oriented plane or the like, anisotropic stress is applied to a central portion of an active layer by forming a asymmetrical oxidation structure in an Al high concentration portion in the mesa, so that polarization controllability of a device can be improved.
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| 申请公布号 |
US2005121678(A1) |
申请公布日期 |
2005.06.09 |
| 申请号 |
US20040978346 |
申请日期 |
2004.11.02 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
EZAKI MIZUNORI;NISHIGAKI MICHIHIKO;TAKAOKA KEIJI |
| 分类号 |
H01L21/00;H01L21/3205;H01L27/15;H01L29/26;H01L31/12;H01S5/183;H01S5/32;(IPC1-7):H01L21/00;H01L33/00;H01L21/320 |
主分类号 |
H01L21/00 |
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