| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent a reference potential from varying, even if a conductive bonding member that bonds the principal surface side of a semiconductor element and a metal body, from being cracked in a resin mold type semiconductor device, that is configured by electrically and thermally connecting the metal body onto front and rear principal surfaces of a longitudinal power element and comprises a reference terminal. <P>SOLUTION: In a semiconductor device S1 wherein, on both the principal surfaces of a semiconductor chip 10 having a plurality of cell blocks on the front principal surface side, first, second and third metal bodies 20, 30 and 40 are bonded via first to third conductive bonding members 51, 52, 53 and the metal bodies are molded by a resin 80, together with a reference terminal T1; the reference terminal T1 is integrally provided in the third metal body 30; and the reference terminal T1 is conducted with cell blocks, other than the cell block that is positioned on the outermost periphery of the semiconductor chip 10, to thereby capturing the reference potential from the conducted portion. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
