| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a NAND flash memory element which can improve program disturb fails. <P>SOLUTION: The method for manufacturing the NAND flash element comprises steps of: performing a first ion implantation for forming a triple well 120 and a second ion implantation for forming a P well 130 on a semiconductor substrate 110; performing a first heat treatment for treating damages of the semiconductor substrate caused by the first and the second ion implantations; performing a third ion implantation for forming an N well 140 and a fourth ion implantation for adjusting threshold voltage; forming a high voltage gate oxide film in a high voltage element region and forming a tunnel oxide film in a low voltage element region and a cell region; and forming a gate electrode after forming an element isolation film. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
